Effects of Zn doping on the anisotropic penetration depth of YBa2Cu3O7

被引：52

作者：

Panagopoulos, C ^{[1
]}

Cooper, JR ^{[1
]}

Athanassopoulou, N ^{[1
]}

Chrosch, J ^{[1
]}

机构：

[1] CENS,CEA,CNRS,LAB LEON BRILLOUIN,F-91191 GIF SUR YVETTE,FRANCE

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.54.R12721

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the temperature (T) and doping dependences of the anisotropic magnetic penetration depth lambda of high-quality grain-aligned YBa2(Cu1-xZnx)(3)O-7 with x=0.00, 0.02, 0.03, and 0.05 using the ac-susceptibility technique. The values of the in-plane, lambda(ab)(0), and out-of-plane, lambda(c)(0), penetration depths were found to increase strongly with increased Zn concentration whereas the anisotropy gamma=[lambda(c)(0)/lambda(ab)(0)] decreased. With increased Zn doping the [lambda(ab)(0)/lambda(ab)(T)](2) and [lambda(c)(0)/lambda(c)(T)](2) systematically approach each other.

引用

页码：12721 / 12724

页数：4

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