Near-UV to violet LEDs -: Wavelength dependence of efficiency limiting processes

被引：9

作者：

Kunzer, M. ^{[1
]}

Kaufmann, U. ^{[1
]}

Koehler, K. ^{[1
]}

Leancu, C. C. ^{[1
]}

Liu, S. ^{[1
]}

Wagner, J. ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674863

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Two wavelength series (373-435 rim) of GaInN/GaN triple quantum well LED-structures, one on sapphire and one on GaN-templates, as well as a quantum well thickness series were grown by MOVPE. In order to study luminescence efficiency limiting effects the LED-structures were characterized by electroluminescence- and by temperature and excitation power dependent photoluminescence spectroscopy. The electroluminescence output and the internal quantum efficiency are peaked near 400 nm in both wavelength series, but output and efficiency are significantly enhanced for growth on templates. The photoluminescence data indicate that below 400 nm the efficiency, apart from insufficient vertical carrier confinement, is limited by poor localization within the quantum film plane while above 400 run piezo-clectric fields appear to be an important efficiency limiting effect.

引用

页码：2822 / +

页数：2

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