Quantum dimensionality, entropy, and the modulation response of quantum dot lasers

被引:75
作者
Deppe, DG [1 ]
Huffaker, DL [1 ]
机构
[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA
关键词
D O I
10.1063/1.1328090
中图分类号
O59 [应用物理学];
学科分类号
摘要
Rate equations are used to show that the modulation response of quantum dot lasers can be limited by entropy change due to carrier relaxation from a wetting layer. The entropy change is due to the difference in the spectral density of quantum states between the two-dimensional wetting layer and the zero-dimensional quantum dot. When limited by this effect, the laser's 3 dB modulation response becomes strongly temperature dependent. (C) 2000 American Institute of Physics. [S0003-6951(00)02647-4].
引用
收藏
页码:3325 / 3327
页数:3
相关论文
共 9 条
[1]   In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties [J].
Bhattacharya, P ;
Kamath, KK ;
Singh, J ;
Klotzkin, D ;
Phillips, J ;
Jiang, HT ;
Chervela, N ;
Norris, TB ;
Sosnowski, T ;
Laskar, J ;
Murty, MR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (05) :871-883
[2]   PHONON-SCATTERING AND ENERGY RELAXATION IN 2-DIMENSIONAL, ONE-DIMENSIONAL, AND ZERO-DIMENSIONAL ELECTRON GASES [J].
BOCKELMANN, U ;
BASTARD, G .
PHYSICAL REVIEW B, 1990, 42 (14) :8947-8951
[3]   Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers [J].
Deppe, DG ;
Huffaker, DL ;
Csutak, S ;
Zou, Z ;
Park, G ;
Shchekin, OB .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (08) :1238-1246
[4]   LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J].
KIRSTAEDTER, N ;
LEDENTSOV, NN ;
GRUNDMANN, M ;
BIMBERG, D ;
USTINOV, VM ;
RUVIMOV, SS ;
MAXIMOV, MV ;
KOPEV, PS ;
ALFEROV, ZI ;
RICHTER, U ;
WERNER, P ;
GOSELE, U ;
HEYDENREICH, J .
ELECTRONICS LETTERS, 1994, 30 (17) :1416-1417
[5]  
KITTEL C, 1980, THERMAL PHYS, pCH2
[6]  
Mukai K, 1996, APPL PHYS LETT, V68, P3013, DOI 10.1063/1.116681
[7]  
SARGENT M, 1974, LASER PHYSICS, pCH2
[8]   Rapid carrier relaxation in In0.4Ga0.6As/GaAs quantum dots characterized by differential transmission spectroscopy [J].
Sosnowski, TS ;
Norris, TB ;
Jiang, H ;
Singh, J ;
Kamath, K ;
Bhattacharya, P .
PHYSICAL REVIEW B, 1998, 57 (16) :R9423-R9426
[9]   Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots [J].
Zhang, L ;
Boggess, TF ;
Deppe, DG ;
Huffaker, DL ;
Shchekin, OB ;
Cao, C .
APPLIED PHYSICS LETTERS, 2000, 76 (10) :1222-1224