A highly reliable self-aligned graded oxide WOx resistance memory:: Conduction mechanisms and reliability

被引：69

作者：

Ho, ChiaHua ^{[1
]}

Lai, E. K. ^{[2
]}

Lee, M. D. ^{[3
]}

Pan, C. L. ^{[4
]}

Yao, Y. D. ^{[5
]}

Hsieh, K. Y. ^{[1
]}

Liu, Rich ^{[1
]}

Lu, C. Y. ^{[1
]}

机构：

[1] Maxcronix Int Co Ltd, 16 Li Hsin Rd,Hsinchu Sci Pk, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu, Taiwan

[3] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[4] Natl Chung Cheng Univ, Inst Phys, Chiayi, Taiwan

[5] Tatung Univ, Dept Mat Engn, Taipei, Taiwan

来源：

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2007年

关键词：

RRAM; WOx; self-aligned; reliability;

D O I：

10.1109/VLSIT.2007.4339703

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

WOx formed by plasmas oxidation shows promising multibit/cell resistance memory characteristics [1]. The simple memory is completely self-aligned, requiring no additional masks and has a small 6F(2) cell size. In this work we introduce a graded oxide device that is highly reliable (250 degrees C baking for > 2,000 hrs). The conduction mechanism and factors affecting the memory reliability are examined extensively.

引用

页码：228 / +

页数：2

共 5 条

[1] DEFECT STATES IN WO3 STUDIED WITH PHOTOELECTRON-SPECTROSCOPY [J].

BRINGANS, RD ;

HOCHST, H ;

SHANKS, HR .

PHYSICAL REVIEW B, 1981, 24 (06) :3481-3489

[2]

HO CH, 2007, IN PRESS 2 BIT CELL

[3]

Mott N. F., 1968, Journal of Non-Crystalline Solids, V1, P1, DOI 10.1016/0022-3093(68)90002-1

[4]

Mott NF., 1979, ELECT PROCESSES NONC, P28

[5] Reproducible resistance switching in polycrystalline NiO films [J].

Seo, S ;

Lee, MJ ;

Seo, DH ;

Jeoung, EJ ;

Suh, DS ;

Joung, YS ;

Yoo, IK ;

Hwang, IR ;

Kim, SH ;

Byun, IS ;

Kim, JS ;

Choi, JS ;

Park, BH .

APPLIED PHYSICS LETTERS, 2004, 85 (23) :5655-5657

← 1 →