Linking dislocation dynamics and chemical reactivity on strained metal films

被引：15

作者：

de la Figuera, J ^{[1
]}

Pohl, K ^{[1
]}

Schmid, AK ^{[1
]}

Bartelt, NC ^{[1
]}

Hwang, RQ ^{[1
]}

机构：

[1] Sandia Natl Labs, Livermore, CA 94550 USA

来源：

SURFACE SCIENCE | 1998年 / 415卷 / 1-2期

关键词：

copper; dislocation multiplication; dislocation networks; etching; scanning tunneling microscopy; strained metal films; surface structure; threading dislocations;

D O I：

10.1016/S0039-6028(98)00624-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The interaction of a model strained metal film with oxygen is studied by scanning tunneling microscopy. Two monolayers of copper on Ru(0001) present a well-defined dislocation network composed of threading dislocations and Shockley partial dislocations separating areas of fee and hcp stacking. We find that oxygen first reacts with these threading dislocations. Then, for exposures up to similar to 0.4 L-O2, new threading dislocation arrays appear on the surface. With the addition of more oxygen, the mesoscopic structure of the film changes from a striped array of Shockley partials to a disordered array of triangular fee regions bounded by dislocations, as oxygen proceeds to etch away the hcp areas of the copper film. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

引用

页码：L993 / L999

页数：7

共 17 条

[1] Oxidized surfaces of Cu films on Ru(0001) [J].