Interpretation of mechanism determining field effect mobility in a-Si:H TFT based on surface reaction model

被引：17

作者：

Chida, Y ^{[1
]}

Kondo, M ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 198卷

关键词：

D O I：

10.1016/0022-3093(96)00060-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dependence of field effect mobility in thin film transistors (TFTs) on deposition conditions of active a-Si:H layers, i.e., rf power, gas flow rate and gas pressure, was studied. The mechanism determining the mobility has been studied in relation to the film growth conditions of a-Si:H and interpreted in terms of the surface reaction model. As an alternative material to a-Si:H, microcrystalline Si was applied to TFTs and the characteristics were compared to a-Si:H TFTs.

引用

页码：1121 / 1124

页数：4

共 4 条

[1]

CHIDA Y, 1994, MATER RES SOC SYMP P, V336, P817, DOI 10.1557/PROC-336-817

[2] DEFECT FORMATION DURING GROWTH OF HYDROGENATED AMORPHOUS-SILICON [J].