Imprint in ferroelectric capacitors

被引：115

作者：

Warren, WL

Tuttle, BA

Dimos, D

Pike, GE

AlShareef, HN

Ramesh, R

Evans, JT

机构：

[1] UNIV MARYLAND,DEPT MAT & NUCL ENGN,COLLEGE PK,MD 20742

[2] RADIANT TECHNOL INC,ALBUQUERQUE,NM 87106

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

ferroelectrics; PZT; thin film; imprint; defects; polarization-voltage;

D O I：

10.1143/JJAP.35.1521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that voltage offsets in the characteristics-voltage characteristics of Pb(Zr,Ti)O-3 capacitors can lead to imprint in ferroelectric memory devices. The thermal-induced voltage shifts (internal bias field) are in part attributed to the role of oxygen vacancy-related defect dipoles throughout the film. In support of this, it is found that donor doping at the Ti(Zr) sites reduces the thermally-induced voltage shifts. The stress-induced voltage shifts are found to be dependent on the Zr/Ti cation ratio. This compositional dependence is explained by considering the role of deep bulk Ti3+ centers and/or a compositional dependent oxygen vacancy density.

引用

页码：1521 / 1524

页数：4

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