Lithographic process simulation for scanners

被引：6

作者：

Erdmann, A ^{[1
]}

Arnz, M ^{[1
]}

Maenhoudt, M ^{[1
]}

Baselmans, J ^{[1
]}

van Osnabrugge, JC ^{[1
]}

机构：

[1] Fraunhofer Inst Silicon Technol, D-25524 Itzehoe, Germany

来源：

OPTICAL MICROLITHOGRAPHY XI | 1998年 / 3334卷

关键词：

step and scan; lithography simulation; aberration averaging;

D O I：

10.1117/12.310746

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In scanner systems wafer and reticle move continuously with respect to the projection optics. This movement across the image field results in varying lateral shift and focus positions and in an averaging of aberrations from different field positions of the projection system. Several approaches for the effective simulation of these effects are discussed. Based on simulated and experimental data, scanner effects are quantified and compared to results of static stepper exposure.

引用

页码：164 / 175

页数：2