A void free soldering process in large-area, high power insulated gate bipolar transistor modules

被引：10

作者：

Onuki, J ^{[1
]}

Chonan, Y

Komiyama, T

Nihei, M

Saitou, R

Suwa, M

Morita, T

机构：

[1] Akita Prefectural Univ, Fac Syst Sci & Technol, Akita 0150055, Japan

[2] Hitachi Ltd, Hitachi Res Lab, Hitachi, Ibaraki 3191292, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 6A期

关键词：

IGBT module; Ni metallization; heat loss; solder joint; FEM; void; surface oxide of Ni plated film; Ag film; surface cleaning;

D O I：

10.1143/JJAP.40.3985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a new void free process for making the solder joint between the chip mounted AlN substrate and the metal substrate in large-area. high power insulated gate bipolar transistor (IGBT) modules. This new process consists of two steps. First, Ar+ were used to clean the surfaces of Ni plated film on a metal and AlN substrates which were then coated with 0.5-mum-thick Ag film. Second, 50 wt% Pb-Sn solder was sandwiched between the two substrates and heated to 503 K in a vacuum for 5 min before being cooled in a N-2 atmosphere. By using this process, the area percentage of voids in a soldering area up to 130 x 190 mm(2) can be reduced to less than 0.1%. IGBT modules made by this process were also found to exhibit satisfactory current-voltage characteristics.

引用

页码：3985 / 3991

页数：7

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