Effect of heat treatment on the oxygen content and resistivity in sputtered NiO films

被引：32

作者：

Kohmoto, O

Nakagawa, H

Isagawa, Y

Chayahara, A

机构：

[1] Okayama Univ, Fac Sci, Dept Phys, Okayama 7008530, Japan

[2] Osaka Natl Res Inst, Dept Mat Phys, Osaka 5638577, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2001年 / 226卷 / PART II期

关键词：

antiferromagnets; thin films; resistivity; oxygen stoichiometry;

D O I：

10.1016/S0304-8853(00)01043-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of heat treatment on the Ni-defective value and electric resistivity in the reactively sputtered NiO films with a 500 nm thickness is studied. The as-sputtered films were largely Ni-defective (Ni1-gammaO); the Ni-defective value gamma of Ni1-gammaO decreases markedly from 0.23 to similar to - 0.01 with the annealing temperature (T-a). With the increase in annealing temperature, the electric resistivity (rho) increases substantially from similar to 1 to 10(5) Ohm cm, changing from p-type semiconductor to oxide characteristics. It was found that the resistivity strongly increases with the decrease of the Ni-defective value (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1629 / 1630

页数：2