A novel method to achieve selective emitter for silicon solar cell using low cost pattern-able a-Si thin films as the semi-transparent phosphorus diffusion barrier

被引：7

作者：

Chen, Da Ming ^{[1
]}

Liang, Zong Cun ^{[1
]}

Zhuang, Lin ^{[1
]}

Lin, Yang Fluan ^{[2
]}

Shen, Hui ^{[1
,2
]}

机构：

[1] Sun Yat Sen Univ, Sch Phys & Engn, Inst Solar Energy Syst, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[2] ShunDe SYSU Inst Solar Energy Syst, Shunde 528300, Peoples R China

来源：

APPLIED ENERGY | 2012年 / 92卷

基金：

中国国家自然科学基金;

关键词：

Silicon solar cell; Selective emitter; a-Si thin film; Sheet resistance; CRYSTALLINE SILICON; POLY-SI; OXIDATION;

D O I：

10.1016/j.apenergy.2011.10.033

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Selective emitter for silicon solar cell was realized by employing a-Si thin films as the semi-transparent diffusion barrier. The a-Si thin films with various thicknesses (similar to 10-40 nm) were deposited by the electron-beam evaporation technique. Emitters with sheet resistances from 37 to 145 Omega/square were obtained via POCl3 diffusion process. The thickness of the a-Si diffusion barrier was optimized to be 15 nm for selective emitter in our work. Homemade mask which can dissolve in ethanol was screen-printed on a-Si film to make pattern. The a-Si film was then patterned in KOH solution to form finger-like design. Selective emitter was obtainable with one-step diffusion with patterned a-Si film on. Combinations of sheet resistances for the high-/low-level doped regions of 39.8/112.1, 36.2/88.8, 35.4/73.9 were obtained. These combinations are suitable for screen-printed solar cells. This preparation method of selective emitter based on a-Si diffusion barrier is a promising approach for low cost industrial manufacturing. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：315 / 321

页数：7

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