Passivation of InP-based heterostructure bipolar transistors - Relation to surface Fermi level

被引：3

作者：

Kikawa, T ^{[1
]}

Takatani, S ^{[1
]}

Masuda, H ^{[1
]}

Tanoue, T ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of the surface Fermi level position on the de characteristics of InP-base heterostructure bipolar transistors (HBTs) is examined. The Fermi level of an InP surface covered with silicon oxide was located at an energy position close to the conduction band minimum of InP. This implies formation cg an electron accumulation layer at the interface, which acts as a surface leakage path. The HBT passivated with silicon-oxide film showed a huge excess base current and poor current gain. In contrast, the Fermi level position at the silicon-nitride/InP interface was found to be near the midgap, and no electron accumulation layer formed at the interface. The HBT passivated with silicon-nitride film showed excellent de characteristics with a very small excess base current.

引用

页码：76 / 79

页数：4