The electronic structure of metal/alkane thiol self-assembled monolayers/metal junctions for magnetoelectronics applications

被引：15

作者：

Ovchenkov, YA

Geisler, H

Burst, JM

Thornburg, SN

Ventrice, CA

Zhang, CJ

Redepenning, J

Losovyj, Y

Rosa, L

Dowben, PA

Doudin, B

机构：

[1] Univ Nebraska, Dept Phys & Astron, Brace Lab 116, Lincoln, NE 68588 USA

[2] Xavier Univ, Dept Chem, New Orleans, LA 70125 USA

[3] Univ New Orleans, Dept Phys, New Orleans, LA 70148 USA

[4] Univ Nebraska, Dept Chem, Lincoln, NE 68588 USA

[5] Louisiana State Univ, CAMD, Baton Rouge, LA 70806 USA

来源：

CHEMICAL PHYSICS LETTERS | 2003年 / 381卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/j.cplett.2003.09.078

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Long-chain alkane thiols use in metal to organic self-assembled monolayer to metal junctions may be limited by orientational disorder, and photoemission studies suggest that several molecular layers may be needed for the dielectric layer to be effective. Several alkane thiols were investigated in a range of junctions areas 10-10(2) mum(2). Top layer contact deposition, activated with Pd clusters resulted in a high yield of junctions that were not electrically shorted and are stable over a wide temperature range. Zero-bias anomalies, observed at low temperatures, are attributed to a Coulomb blockade associated with the Pd clusters. (C) 2003 Elsevier B.V. All rights reserved.

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页码：7 / 13

页数：7

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