Electron traps on high-temperature oxidized SIMOX buried oxides

被引：4

作者：

Lawrence, RK ^{[1
]}

Ioannou, DE ^{[1
]}

机构：

[1] GEORGE MASON UNIV,DEPT ELECT & COMP ENGN,FAIRFAX,VA 22030

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 07期

关键词：

D O I：

10.1109/55.506361

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photo-injection was used to study the charge trapping properties of high-temperature oxidation (HITOX) SIMOX buried oxides (BOX), provided by two independent vendors. After electron injection, from a 5 eV mercury light source, the electron trapping per area for both HITOX material sources was found to be larger than their respective standard (control) separation by implantation of oxygen (SIMOX) structures. This increase has been attributed to the HITOX's process influence on the formation of the HITOX/BOX oxide.

引用

页码：341 / 343

页数：3

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