Spectroelectrochemistry of highly doped nanostructured tin dioxide electrodes

被引:99
作者
Boschloo, G [1 ]
Fitzmaurice, D [1 ]
机构
[1] Univ Coll Dublin, Dept Chem, Dublin 4, Ireland
来源
JOURNAL OF PHYSICAL CHEMISTRY B | 1999年 / 103卷 / 16期
关键词
D O I
10.1021/jp9835566
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A new, highly doped nanostructured SnO2:Sb electrode has been prepared. This electrode possesses characteristics markedly different from undoped nanostructured semiconductor electrodes. Cyclic voltammetry and spectroelectrochemical experiments reveal that the whole of the nanostructured SnO2:Sb electrode is electronically addressed in a potential range extending from negative to significantly positive of the flatband potential. The flatband potential of nanostructured SnO2:Sb, obtained from the Mott-Schottky analysis, shows Nernstian dependence on pH and is given by +0.10 - (0.06)(pH) (V vs Ag/AgCl). The extinction coefficient for conduction band electrons is determined to be 2400 M-1 cm(-1) at 700 nm. A theoretical model, based on; expressions derived for spherical semiconductor particles, fully accounts for the observed capacity-potential relation.
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页码:3093 / 3098
页数:6
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