Nonequilibrium photon-induced hotspot: A new mechanism for photodetection in ultrathin metallic films

被引:70
作者
Kadin, AM [1 ]
Johnson, MW [1 ]
机构
[1] UNIV ROCHESTER,DEPT PHYS & ASTRON,ROCHESTER,NY 14627
关键词
D O I
10.1063/1.117576
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new class of photodetectors is proposed, based on localized heating of an ultrathin metallic film due to absorption of individual photons. For a 1 eV photon, the transient temperature rise can be of order 10 K or greater in a nonequilibrium ''hotspot'' on the nm spatial scale and ps timescale. If current is flowing in a metallic film with a temperature-dependent resistance, such a hotspot can give rise to a voltage pulse. This can provide the basis for an ultrafast photodetector with spectral sensitivity, in contrast to a conventional bolometer. Prospects for practical realization of infrared photodetectors based on this mechanism are discussed. (C) 1996 American Institute of Physics.
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收藏
页码:3938 / 3940
页数:3
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