Intraband absorption in the 8-12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

被引：35

作者：

Zhuang, QD ^{[1
]}

Li, JM ^{[1
]}

Li, HX ^{[1
]}

Zeng, YP ^{[1
]}

Pan, L ^{[1
]}

Chen, YH ^{[1
]}

Kong, MY ^{[1
]}

Lin, LY ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Novel Mat Ctr, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 25期

关键词：

D O I：

10.1063/1.122870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Normal-incident infrared absorption in the 8-12-mu m-atmospheric spectral window in the InGaAs/GaAs quantum-dot superlattice is observed. Using cross-sectional transmission electron microscopy, we find that the InGaAs quantum dots are perfectly vertically aligned in the growth direction (100). Under the normal incident radiation, a distinct absorption peaked at 9.9 mu m is observed. This work indicates the potential of this quantum-dot superlattice structure for use as normal-incident infrared imaging focal arrays application without fabricating grating structures. (C) 1998 American Institute of Physics. [S0003-6951(98)01151-6].

引用

页码：3706 / 3708

页数：3

共 21 条

[1] High-resolution x-ray diffraction from multilayered self-assembled Ge dots [J].

Darhuber, AA ;

Schittenhelm, P ;

Holy, V ;

Stangl, J ;

Bauer, G ;

Abstreiter, G .

PHYSICAL REVIEW B, 1997, 55 (23) :15652-15663

[2] Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction [J].

Darhuber, AA ;

Holy, V ;

Stangl, J ;

Bauer, G ;

Krost, A ;

Heinrichsdorff, F ;

Grundmann, M ;

Bimberg, D ;

Ustinov, VM ;

Kopev, PS ;

Kosogov, AO ;

Werner, P .

APPLIED PHYSICS LETTERS, 1997, 70 (08) :955-957

[3] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS [J].

DREXLER, H ;

LEONARD, D ;

HANSEN, W ;

KOTTHAUS, JP ;

PETROFF, PM .

PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2252-2255

[4]

Fafard S, 1996, APPL PHYS LETT, V68, P991, DOI 10.1063/1.116122

[5] Shell structure and electron-electron interaction in self-assembled InAs quantum dots [J].

Fricke, M ;

Lorke, A ;

Kotthaus, JP ;

MedeirosRibeiro, G ;

Petroff, PM .

EUROPHYSICS LETTERS, 1996, 36 (03) :197-202

[6]

Grundmann M, 1996, APPL PHYS LETT, V68, P979, DOI 10.1063/1.116118

[7] NORMAL INCIDENT INGAAS/GAAS MULTIPLE-QUANTUM-WELL INFRARED DETECTOR USING ELECTRON INTERSUBBAND TRANSITIONS [J].

KARUNASIRI, G ;

PARK, JS ;

CHEN, J ;

SHIH, R ;

SCHEIHING, JF ;

DODD, MA .

APPLIED PHYSICS LETTERS, 1995, 67 (18) :2600-2602

[8] Quantum capture times at room temperature in high-speed In0.4Ga0.6As-GaAs self-organized quantum-dot lasers [J].

Klotzkin, D ;

Kamath, K ;

Bhattacharya, P .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (10) :1301-1303

[9] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[10] QUANTUM-WELL INFRARED PHOTODETECTORS [J].

LEVINE, BF .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) :R1-R81

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