Side-gated transport in focused-ion-beam-fabricated multilayered graphene nanoribbons

被引:40
作者
Dayen, Jean-Francois [1 ]
Mahmood, Ather [1 ]
Golubev, Dmitry S. [2 ,3 ]
Roch-Jeune, Isabelle [4 ]
Salles, Philippe [1 ]
Dujardin, Erik [1 ]
机构
[1] CEMES CNRS, UPR 8011, NanoSci Grp, F-31055 Toulouse 4, France
[2] Forschungszentrum Karlsruhe, Inst Nanotechnol, D-76021 Karlsruhe, Germany
[3] PN Lebedev Phys Inst, IE Tamm Dept Theoret Phys, Moscow 119991, Russia
[4] CNRS, UMR 8520, IEMN, F-59652 Villeneuve Dascq, France
关键词
field-effect transistors; graphene; lithography; organic electronics;
D O I
10.1002/smll.200700913
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A study was conducted to demonstrate the patterning, exfoliation, and micromanipulation of thin graphitic discs, which were connected and patterned into nanometric ribbons, with a resist-free process, using focused ion beam (FIB) lithography and deposition. The electronic transport properties of the double side-gated nanoribbons were investigated and interpreted, with a simple model of a 1D array of tunneling junctions. The process of sample preparation consisted of a number of steps, including patterning cylindrical micropillars on a HOPG crystal, extracting thin discs from the core of the pillar and depositing at the center of prepatterned micromanipulator, obtaining 12- 8-nm-thick discs through in situ exfoliation with the glass tip, and assessing the structural quality through atomic force microscopy (AFM) imaging.
引用
收藏
页码:716 / 720
页数:5
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