Ostwald ripening of two-dimensional islands on Si(001)

被引：193

作者：

Bartelt, NC ^{[1
]}

Theis, W ^{[1
]}

Tromp, RM ^{[1
]}

机构：

[1] IBM CORP, DIV RES, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.54.11741

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used low-energy electron microscopy to study two-dimensional island ripening on Si(001). By studying the behavior of individual islands compared to their surroundings, we are able to quantify the step-edge attachment and terrace diffusion processes that are responsible for the ripening. By comparing the time dependence of specific configurations of islands to simulations, we find correlations in the rate of change of an island's area with the sizes of neighboring islands, implying that the chemical potential of the adatom sea is not uniform as classical theories of Ostwald ripening assume. From measurements of the time dependence of each island, we chart out these nonuniformities and relate them to adatom diffusion coefficients.

引用

页码：11741 / 11751

页数：11

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