On the absence of detectable carrier multiplication in a transient absorption study of InAs/CdSe/ZnSe core/shell1/shell2 quantum dots

被引：146

作者：

Ben-Lulu, Meirav ^{[1
]}

Mocatta, David ^{[1
,2
]}

Bonn, Mischa ^{[3
]}

Banin, Uri ^{[1
,2
]}

Ruhman, Sanford ^{[1
]}

机构：

[1] Farkas Ctr Light Induced Proc, Inst Chem, IL-91904 Jerusalem, Israel

[2] Ctr Nanosci & Nanotechnol, IL-91904 Jerusalem, Israel

[3] FOM, Inst Atom & Mol Phys, AMOLF, NL-1098 SJ Amsterdam, Netherlands

来源：

NANO LETTERS | 2008年 / 8卷 / 04期

关键词：

D O I：

10.1021/nl080199u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Tunable femtosecond pump-near IR probe measurements on InAs/CdSe/ZnSe core/shell1/shell2 nanocrystal quantum dots were conducted to quantify spontaneous carrier multiplication previously reported in this system. Experimental conditions were chosen to eliminate the need for determining absolute wavelength dependent cross sections of the nanocrystals and allow direct comparison of band edge absorption bleach kinetics for different excitation energies up to 3.7 times the band gap. Results for two sample sizes show no signs of carrier multiplication within that range. This result is discussed in light of reports describing occurrence of this novel phenomenon in quantum dots based on this as well as numerous other semiconductor materials.

引用

页码：1207 / 1211

页数：5

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