5.5kV normally-off low RonS 4H-SiC SEJFET

被引：17

作者：

Asano, K ^{[1
]}

Sugawara, Y ^{[1
]}

Ryu, S ^{[1
]}

Singh, R ^{[1
]}

Palmour, J ^{[1
]}

Hayashi, T ^{[1
]}

Takayama, D ^{[1
]}

机构：

[1] Kansai Elect Power Co, Tech Res Ctr, Amagasaki, Hyogo 6610974, Japan

来源：

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年

关键词：

D O I：

10.1109/ISPSD.2001.934551

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A normally-off type 5.5kV 4H-SiC JFET with low specific on-resistance, called SEJFET (Static Expansion channel JFET), has been fabricated. Its normally-off operation was realized by a thin regrown epitaxial channel layer and using the buried p+ regions as a gate in addition to the top p+ regions. The achieved blocking voltage (BV) is the highest BV among the reported Sic switching devices. By the expansion of the channel region under die positive biases of both gates, specific on-resistance (RonS) can be reduced and 218 n Omega cm(2) achieved. Furthermore, a 4H-SiC SEJFET with a BV of 4.45kV has been fabricated, which has the largest figure of merit BV2/RonS of 164MW/cm(2).

引用

页码：23 / 26

页数：4

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