High level ab initio calculations of the optical gap of small silicon quantum dots -: art. no. 276402

被引:149
作者
Garoufalis, CS [1 ]
Zdetsis, D
Grimme, S
机构
[1] Univ Patras, Dept Phys, Patras 26500, Greece
[2] Univ Munster, Inst Organ Chem, D-48149 Munster, Germany
关键词
D O I
10.1103/PhysRevLett.87.276402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using state of the art time-dependent density functional theory and multireference second-order perturbation theory, we have accurately calculated (within 0.3 eV) in real space the optical gap of small silicon quantum dots, with diameters up to 25 Angstrom. Our results, which support the quantum confinement hypothesis, are in excellent agreement with recent and earlier experimental,data on oxygen-free samples and the conclusions of Wilcoxon et al. [Phys. Rev. B 60, 2704 (1999)]. We have found that the diameter of the smallest dot, which could emit photoluminescence in the visible region of the spectrum, is around 22 Angstrom. Our work can resolve existing controversies and bridge diverse experimental and theoretical results.
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收藏
页码:276402 / 1
页数:4
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