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Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

被引：76
作者：
Klein, PB
Binari, SC
Ikossi-Anastasiou, K
Wickenden, AE
Koleske, DD
Henry, RL
Katzer, DS
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] USA, Res Lab, Adelphi, MD 20783 USA
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 10期
关键词：
D O I：
10.1049/el:20010434
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Current collapse in ALGaN/GaN HEMTs has been investigated using photo-ionisation spectroscopy techniques to probe the spatial origins of the traps producing this effect. The results indicate that the responsible traps reside in the high-resistivity GaN buffer layer and are identical to those traps causing current collapse in GaN MESFETs.
引用
收藏
页码：661 / 662
页数：2
相关论文
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