High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

A low-dislocation-density thick GaN layer was successfully grown using selective-area HVPE growth combined with epitaxial lateral overgrowth. The InGaN MQWs fabricated on this thick GaN layer showed superior optical properties compared with that on a sapphire substrate. ME diffusion, induced by threading dislocations, was greatly suppressed for the LEDs on the HVPE-grown GaN layer. The results clearly indicate that the HVPE-grown GaN substrate will be useful for achieving high-performance light-emitting devices. (C) 1998 Elsevier Science B.V. All rights reserved.