Sprayed CuInS2 films grown under Cu-rich conditions as absorbers for solar cells

被引:39
作者
Krunks, M
Kijatkina, O
Mere, A
Varema, T
Oja, I
Mikli, V
机构
[1] Tallinn Univ Technol, Dept Mat Sci, EE-19086 Tallinn, Estonia
[2] Tallinn Univ Technol, Ctr Mat Res, EE-19086 Tallinn, Estonia
关键词
CuInS2; spray pyrolysis; grain size; solar cell; quantum efficiency;
D O I
10.1016/j.solmat.2004.07.024
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
CuInS2 films were prepared by the spray pyrolysis method using either copper-rich solutions or the recrystallization of low-crystallinity film in the presence of an intentionally deposited CuxS layer. KCN-etched films were characterized by XRD, SEM and EDX The Cu/In molar ratio of 1.5-4.0 in the solution resulted in well-crystallized CuInS2 films with the mean crystallite size of 120 nm. SEM study showed nonuniform surface with irregularly placed large grain domains in the flat film. The two-step process resulted in a uniform film with the crystallite size of 50 nm. Films exhibited an In-rich composition. Solar cells based on a recrystallized absorber showed an improved quantum efficiency spectrum. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:207 / 214
页数:8
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