Controlling surface statistical properties using bias voltage: Atomic force microscopy and stochastic analysis

被引:31
作者
Sangpour, P
Jafari, GR
Akhavan, O
Moshfegh, AZ
Tabar, MRR
机构
[1] Sharif Univ Technol, Dept Phys, Tehran, Iran
[2] Observ Cote Azur, CNRS, UMR 6529, F-06304 Nice, France
关键词
D O I
10.1103/PhysRevB.71.155423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of bias voltages on the statistical properties of rough surfaces has been studied using atomic force microscopy technique and its stochastic analysis. We have characterized the complexity of the height fluctuation of a rough surface by the stochastic parameters such as roughness exponent, level crossing, and drift and diffusion coefficients as a function of the applied bias voltage. It is shown that these statistical as well as microstructural parameters can also explain the macroscopic property of a surface. Furthermore, the tip convolution effect on the stochastic parameters has been examined.
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页数:9
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