Atomic structures of hydrogen-terminated Si(001) surfaces after wet cleaning by scanning tunneling microscopy

被引：36

作者：

Endo, K ^{[1
]}

Arima, K ^{[1
]}

Kataoka, T ^{[1
]}

Oshikane, Y ^{[1
]}

Inoue, H ^{[1
]}

Mori, Y ^{[1
]}

机构：

[1] Osaka Univ, Dept Precis Sci & Technol, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 13期

关键词：

D O I：

10.1063/1.122304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy observations are performed on a H-terminated Si(001) surface treated with HF solutions and ultrapure water with very low dissolved oxygen and total organic carbon contents. Over a large area, row structures are observed in [110] and [1 (1) over bar 0] directions. Pyramidal-shaped etch pits are also observed, which are caused by anisotropic etching by OH ions. Detailed images clearly show 2 X 1 periodic structures. It is suggested that every other row of the ideally dihydride 1 X 1 surface is etched preferentially by OH ions. This explains the mechanism by which the smallest etch pits are formed. (C) 1998 American Institute of Physics. [S0003-6951(98)01839-7].

引用

页码：1853 / 1855

页数：3

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