A study of ZnGa2O4 phosphor prepared by the solid method

被引:53
作者
Hsu, KH [1 ]
Yang, MR [1 ]
Chen, KS [1 ]
机构
[1] Tatung Inst Technol, Dept Mat Engn, Taipei 104, Taiwan
关键词
D O I
10.1023/A:1008824706106
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, the mixtures of ZnO and Ga2O3 powder with addition of LiCl flux were fired, the raw material mixing ratio, doping with Mn2+ and firing atmosphere effects on phosphor characteristics were investigated. When fired at 1200 degrees C, its phosphor powder emits a broad-band spectrum range between 375 nm to 700 nm, with a peak at 470 nm. The optimal composition of phosphors is about ZnO/Ga2O5 = 47/53. Manganese-doped ZnGa2O4, fired in air, exhibits two new emission bands with peaks at 506 nm (Mn2+ emission centre) and 666 nm (Mn4+ emission centre). However, if fired under vacuum, the emission spectrum presents only the 506 nm peak with increased intensity. The 666 nm emission peak derived from a little Mn-2 oxidized to Mn4+ which substituted Ga3+ to occupy the B sites of the spinel structure. The emission intensity of the 506 nm peak of Zn1-xMnxGa2O4 is strongest when [Mn2+] x = 0.006 and decreases markedly as the concentration of Mn2+ exceeds x = 0.01. Most of the substitutional Mn2+ doping species in spinel ZnGa2O4 occupy the zinc sites. The luminescent band was associated to the spin-forbidden transition, T-4(1)(4G) --> (6)A(1) (6S). (C) 1998 Kluwer Academic Publishers.
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页码:283 / 288
页数:6
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