Elementary Sisyphus process close to a dielectric surface

被引:45
作者
Desbiolles, P [1 ]
Arndt, M [1 ]
Szriftgiser, P [1 ]
Dalibard, J [1 ]
机构
[1] UNIV PARIS 06, CNRS, UNITE RECH, F-75252 PARIS 05, FRANCE
来源
PHYSICAL REVIEW A | 1996年 / 54卷 / 05期
关键词
D O I
10.1103/PhysRevA.54.4292
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We investigate both theoretically and experimentally an elementary Sisyphus process occurring during the reflection of an atom onto a laser evanescent wave propagating at the surface of a dielectric prism. Cesium atoms bouncing at normal incidence may undergo a spontaneous Raman transition between their two hyperfine levers; this leads to an efficient cooling since those levels are light shifted by a different amount by the laser-atom interaction thanks to the large hyperfine splitting. We compare the measured final energy distributions after the bounce with Monte Carlo simulations. A quantitative agreement is obtained when the van der Waals interaction between the cesium atoms and the dielectric prism is taken into account.
引用
收藏
页码:4292 / 4298
页数:7
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