High-flux high-efficiency transparent-substrate AlGaInP/GaP light-emitting diodes

被引：20

作者：

Hofler, GE

Carter-Coman, C

Krames, MR

Gardner, NF

Kish, FA

Tan, TS

Loh, B

Posselt, J

Collins, D

Sasser, G

机构：

[1] Hewlett Packard Co, Div Optoelect, San Jose, CA 95131 USA

[2] Hewlett Packard Labs, Palo Alto, CA 94303 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 18期

关键词：

D O I：

10.1049/el:19981217

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented demonstrating led-orange-yellow spectrum (AlxGa1-x)(0.5)In0.5P/GaP high-power light-emitting diode (LED) lamps which emit 10-20lm of flux while simultaneously maintaining luminous efficiencies of greater than or equal to 201m/W. The flux emitted by these devices represents an improvement of about five times compared to conventional high-brightness transparent-substrate (AlxGa1-x)(0.5)In0.5P/GaP LED lamps.

引用

页码：1781 / 1782

页数：2

共 5 条

[1]

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[3] HIGH LUMINOUS FLUX SEMICONDUCTOR WAFER-BONDED ALGAINP/GAP LARGE-AREA EMITTERS [J].

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ELECTRONICS LETTERS, 1994, 30 (21) :1790-1792

[4]

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[5]

WEAST RC, 1981, CRC HDB CHEM PHYSICS, pE99

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