Growth and characterization of In-Se films

被引：24

作者：

Kobbi, B ^{[1
]}

Ouadjaout, D

Kesri, N

机构：

[1] Univ Boumerdes, Fac Sci, Dept Phys, Boumerdes 3500, Algeria

[2] UDTS, Alger Gare, Algeria

[3] USTHB, Fac Sci, Semicond Lab, Alger, Algeria

来源：

VACUUM | 2001年 / 62卷 / 04期

关键词：

InxSe1-x; films; flash evaporation;

D O I：

10.1016/S0042-207X(01)00157-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of InSe were obtained by thermal and flash evaporation techniques on glass substrates maintained at various temperatures (T-S = 30, 100, 160, 200 degreesC). The best films were obtained for a substrate temperature of 160 degreesC followed by annealing at 200 degreesC for 6 h. Analysis of the films showed strong decomposition of films obtained by thermal evaporation. Structural studies showed the presence of In4Se3 with InSe. The chemical formula of the composite is InxSe1-x. The values of x found by the microprobe analysis vary between 0.52 and 0.56. Optical absorption data are also explained in terms of composition variation. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：321 / 324

页数：4

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