Polysilicon TFT technology for active matrix OLED displays

被引:274
作者
Stewart, M [1 ]
Howell, RS
Pires, L
Hatalis, MK
机构
[1] Lucent Technol, Allentown, PA 18015 USA
[2] Lehigh Univ, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA
关键词
hillocks; nickel silicide; organic light emitting diode displays; polysilicon; rapid thermal processing;
D O I
10.1109/16.918227
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The integration of active matrix polysilicon TFT technology with organic light emitting diode (OLED) displays has been investigated with the goal of producing displays of uniform brightness. This work identifies and addresses several process integration issues unique to this type of display which are important in achieving bright and uniform displays. Rapid thermal processing (RTP) has been incorporated to achieve uniform polysilicon microstructure, along with silicides to reduce parasitic source and drain series resistance. Using these processes, TFT drain current nonuniformity has been reduced below 5% for 90% of the devices. This work also introduces transition metals to produce low resistance contacts to indium-tin-oxide (ITO) and to eliminate hillock formation in the aluminum metallization, These processes, along with spin on glasses for planarization, have been used to produce functional active matrix arrays for OLED displays. The final array pixel performance is also presented.
引用
收藏
页码:845 / 851
页数:7
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