Effect of SR irradiation on crystallization of amorphous tin oxide film

被引：7

作者：

Kimura, Y

Kobayashi, T

Hanamoto, K

Sasaki, M

Kimura, S

Nakada, T

Nakayama, Y

Kaito, C

机构：

[1] Ritsumeikan Univ, Dept Phys, Shiga 5258577, Japan

[2] Ctr Ind Res, Shiga 5203004, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 467卷

关键词：

crystallization; irradiation; amorphous thin films; crystallographic shear;

D O I：

10.1016/S0168-9002(01)00624-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In order to see the effect of SR irradiation on crystal growth., crystallization of tin oxide films has been performed in vacuum under SR irradiation, A thin amorphous tin oxide film 50 nm thick was prepared on the carbon substrate by vacuum evaporation of SnO2 power, A SnO crystal appeared between 450-500 degreesC upon vacuum heating, with a preferred orientation of (0 0 1). By SR irradiation using a cylindrical mirror for 20 s, the SnO crystal appeared with the preferred orientation of (1 1 1). The crystal with the crystallographic shear structure was grown by SR irradiation. This growth under a SR beam is discussed in terms of SR beam excitation of lone-pair electrons seen in the SnO crystal structure. (C). 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1221 / 1224

页数：4

共 6 条

[1] CS FAMILIES DERIVED FROM REO3 STRUCTURE TYPE - ELECTRON-MICROSCOPE STUDY OF REDUCED WO3 AND RELATED PSEUDOBINARY SYSTEMS [J].