Direct wafer bonding and layer transfer: An innovative way for the integration of ferroelectric oxides into silicon technology

被引：11

作者：

Alexe, M ^{[1
]}

Senz, S ^{[1
]}

Pignolet, A ^{[1
]}

Scott, JF ^{[1
]}

Hesse, D ^{[1
]}

Gosele, U ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

FERROELECTRIC THIN FILMS VI | 1998年 / 493卷

关键词：

D O I：

10.1557/PROC-493-517

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An innovative fabrication process of ferroelectric-semiconductor heterostructures based on direct wafer bonding has been demonstrated. Ferroelectric thin films of Bi4Ti3O12 (BF) and Pb(Zr,Ti)O-3 (PZT) were deposited on 3 " Si wafers using chemical solution deposition (CSD) and subsequently crystallized by conventional and rapid thermal annealing. The films were then polished in order to reach a roughness and waviness suitable for bonding. They were then directly bonded to silicon wafers in a micro-cleanroom and annealed in air at temperatures ranging from 200 degrees C to 500 degrees C. Bonding energies up to 1.5 J/m(2) have been achieved which is almost high enough to consider the two bonded wafers as a single body. Metal-Ferroelectric Silicon (MFS) structures containing the ferroelectric-Si bonded interface were accomplished by polishing down and etching the handling wafer. The MFS structures were electrically characterized by capacitance-voltage (C-V) and charge-voltage (Q-V) measurements.

引用

页码：517 / 522

页数：6