Direct wafer bonding and layer transfer: An innovative way for the integration of ferroelectric oxides into silicon technology

被引:11
作者
Alexe, M [1 ]
Senz, S [1 ]
Pignolet, A [1 ]
Scott, JF [1 ]
Hesse, D [1 ]
Gosele, U [1 ]
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
来源
FERROELECTRIC THIN FILMS VI | 1998年 / 493卷
关键词
D O I
10.1557/PROC-493-517
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An innovative fabrication process of ferroelectric-semiconductor heterostructures based on direct wafer bonding has been demonstrated. Ferroelectric thin films of Bi4Ti3O12 (BF) and Pb(Zr,Ti)O-3 (PZT) were deposited on 3 " Si wafers using chemical solution deposition (CSD) and subsequently crystallized by conventional and rapid thermal annealing. The films were then polished in order to reach a roughness and waviness suitable for bonding. They were then directly bonded to silicon wafers in a micro-cleanroom and annealed in air at temperatures ranging from 200 degrees C to 500 degrees C. Bonding energies up to 1.5 J/m(2) have been achieved which is almost high enough to consider the two bonded wafers as a single body. Metal-Ferroelectric Silicon (MFS) structures containing the ferroelectric-Si bonded interface were accomplished by polishing down and etching the handling wafer. The MFS structures were electrically characterized by capacitance-voltage (C-V) and charge-voltage (Q-V) measurements.
引用
收藏
页码:517 / 522
页数:6
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