Structure, composition, dielectric, and AC conduction studies on tin selenide films

被引：49

作者：

Suguna, P ^{[1
]}

Mangalaraj, D ^{[1
]}

Narayandass, SK ^{[1
]}

Meena, P ^{[1
]}

机构：

[1] BHARATHIAR UNIV, DEPT PHYS, THIN FILM LAB, COIMBATORE 641046, TAMIL NADU, INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1996年 / 155卷 / 02期

关键词：

D O I：

10.1002/pssa.2211550214

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Al-SnSe-Al thin film capacitors were fabricated onto well cleaned glass substrates by thermal evaporation under a pressure of 2 mPa. Multiple beam interferometry (MBI) was used to measure the thicknesses of the SnSe films. The composition and structure of SnxSe1-x films were analysed using Rutherford backscattering spectrometry and X-ray diffractogram, respectively. The capacitor samples were stabilised by aging and annealing. The variations of the dielectric constant and loss as a function of frequency at different temperatures were observed and the results are discussed. AC conduction studies reveal that the conduction mechanism is due to hopping of holes. The activation energies were also calculated.

引用

页码：405 / 416

页数：12

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