Guide to references on III-V semiconductor chemical etching

被引：128

作者：

Clawson, AR ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

MATERIALS SCIENCE & ENGINEERING R-REPORTS | 2001年 / 31卷 / 1-6期

关键词：

chemical etching; wet etchants; dry etchants;

D O I：

10.1016/S0927-796X(00)00027-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The literature on chemical etching of III-V semiconductors is reviewed with the intent to organize citations in categories useful to device and materials investigators. Descriptive citations are grouped by the intended etch application and subgrouped by specific semiconductors for both wet and dry etching. A separate section groups citations by the various chemical compositions used as etchants so that a broad view of results and issues can be accessed. The final section lists references by author, with complete titles and notes of their relevance to etching. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1 / 438

页数：438

共 188 条

[1]

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[2]

Abernathy C.R., Ren F., Pearton S.J., Implant Isolation and Dry Etching of InN, InP and Related Material Conference Proceedings, pp. 387-390, (1994)

[3]

Abraham-Shrauner B., Nordheden K.J., Lee Y.-S., Model for etch depth dependence on GaAs via hole diameter, J. Vac. Sci. Technol., B, 17, 3, (1999)

[4]

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[5]

Adachi H., Hartnagel H.L., GaAs Schottky Light Emitters for the Study of Surface Avalanching and Electroluminescence, J. Vac. Sci. Technol., 19, 3, pp. 427-430, (1981)

[6]

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[7]

Adachi S., Etching of InP: Overview, Properties of Indium Phosphide, EMIS Datareview Series, 6, pp. 335-336, (1990)

[8]

Adachi S., Wet Etching of InP, Properties of Indium Phosphide, EMIS Datareview Series, 6, pp. 337-343, (1990)

[9]

Adachi S., Kawaguchi H., Chemical Etching Characteristics of (0 0 1) InP, J. Electrochem. Soc., 128, 6, pp. 1342-1349, (1981)

[10]

Adachi S., Kawaguchi H., Takahei K., Noguchi Y., InGaAsP/InP Buried-Heterostructure Lasers (1 = 1.5 μm) with Chemically Etched Mirrors, J. Appl. Phys., 52, 9, pp. 5843-5845, (1981)

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