Intermixing in GaAsSb/GaAs single quantum wells

被引：20

作者：

Khreis, OM ^{[1
]}

Homewood, KP

Gillin, WP

Singer, KE

机构：

[1] Yarmouk Univ, Hijjawi Fac Engn & Technol, Irbid, Jordan

[2] Univ Surrey, Sch elect Engn Informat Technol & Math, Guildford GU2 5XH, Surrey, England

[3] Univ London Queen Mary & Westfield Coll, Dept Phys, London E1 4NS, England

[4] Univ Manchester, Inst Sci & Technol, Dept Elect Engn & Elect, Manchester M60 1QD, Lancs, England

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.368583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence coupled with repetitive thermal annealing has been used to study the interdiffusion process in a 10 nm GaAs1-xSbx/GaAs single quantum well. The diffusion equations and the Schrodinger equation were solved numerically to obtain the composition profile and the n=1 electron to heavy-hole transition energies in the intermixed quantum well, respectively. The intermixing process was shown to obey Fick's second law. (C) 1998 American Institute of Physics. [S0021-8979(98)02819-9].

引用

页码：4017 / 4019

页数：3

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