Thin film of CeO2-SiO2:: a new ion storage layer for smart windows

被引:27
作者
Berton, MAC [1 ]
Avellaneda, CO [1 ]
Bulhoes, LOS [1 ]
机构
[1] Univ Fed Sao Carlos, Dept Quim, LIEC, CP 676, BR-13565905 Sao Carlos, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
ion storage electrode; thin films; electrochromic devices;
D O I
10.1016/j.solmat.2003.08.012
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Thin solid films of CeO2-SiO2, used as a counter-electrode layer in electrochromic devices, were prepared by the sol-gel dip coating, using an aqueous-based process. The influence of the SiO2 addition on electrochemistry of the CeO2 oxide coatings was determined by chronoamperometric measurements. The films exhibit a larger charge storage capacity, which was determined as a function of the coatings thickness. The peak occurrence in the chronoamperometric curve during the deintercalation of lithium ions in the cerium/silicon films is analyzed in terms of trapping energy levels for Li+ ions into the film. In situ UV-Vis spectroelectrochemical measurements of the CeO2-SiO2 coatings indicated that the films remained transparent in the visible spectral range during the intercalation process. Powders were characterized by X-ray diffraction after the same thermal treatment of the films, indicating a decrease of crystallinity with the doping. The feasibility for use of these electrodes as ion storage for electrochromic devices was investigated. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:443 / 449
页数:7
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