Multicomponent thin films for electrochemical sensor applications prepared by pulsed laser deposition

被引:34
作者
Schubert, J [1 ]
Schöning, MJ
Mourzina, YG
Legin, AV
Vlasov, YG
Zander, W
Lüth, H
机构
[1] Forschungszentrum Julich, Res Ctr, Inst Thin Film & Ion Technol, D-52425 Julich, Germany
[2] St Petersburg Univ, Dept Chem, St Petersburg 199034, Russia
[3] Univ Appl Sci Aachen, D-52428 Julich, Germany
关键词
thin film sensor; pulsed laser deposition; chalcogenide glass; RBS; heavy metal determination;
D O I
10.1016/S0925-4005(01)00616-5
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Thin film sensors on the basis of the different chalcogenide glass materials (PbS-AgI-AsS, CdS-AgI-AsS, Tl-Ag-As-I-S) have been prepared by means of an off-axis pulsed laser deposition technique (PLD). The physical structure and the stoichiometric composition of the deposited glass layers have been investigated by Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). It is shown that the complex stoichiometry of the chalcogenide target materials is maintained in the chalcogenide thin films prepared by PLD. Depending on the material system used, these novel thin film sensors possess a high sensitivity towards Pb and Cd of 25-29 mV/pX (X = Pb, Cd) and 54-60 mV/pTl over a measuring period of more than 150 days. The obtained results are in good accordance in comparison to measurements performed with bulk sensors. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:327 / 330
页数:4
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