In situ examination of the chemical etching of SiO2-Si structures using an atomic force microscope

被引：1

作者：

Bukharaev, AA ^{[1
]}

Bukharaeva, AA ^{[1
]}

Nurgazizov, NI ^{[1
]}

Ovchinnikov, DV ^{[1
]}

机构：

[1] Russian Acad Sci, Kazan Sci Ctr, EK Zavoiskii Phys Tech Inst, Kazan, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

SiO2; Atomic Force Microscope; Chemical Etching; SiO2 Etching;

D O I：

10.1134/1.1262294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

First results are reported of in situ visualization of the chemical etching of P+-ion implanted SiO2-Si structures in an aqueous HF solution using an atomic force microscope. The rates of SiO2 etching were determined and the kinetics of the photostimulated chemical etching of Si were investigated. (C) 1998 American Institute of Physics, [S1063-7850(98)01311-1].

引用

页码：863 / 865

页数：3