Observation of reduced nonradiative current in 1.3-μm AlGaInAs-InP strained MQW lasers

被引：29

作者：

Higashi, T ^{[1
]}

Sweeney, SJ

Phillips, AF

Adams, AR

O'Reilly, EP

Uchida, T

Fujii, T

机构：

[1] Univ Surrey, Dept Phys, Guildford GU2 5XH, Surrey, England

[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 04期

关键词：

laser thermal factor; quantum-well laser; semiconductor laser; spontaneous emission; temperature;

D O I：

10.1109/68.752531

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated experimentally the temperature dependence of the threshold current in 1.3-mu m AlGaInAs-InP strained multiple-quantum-well lasers, We find that radiative recombination constitutes almost 100% of the threshold current up to 220 K and remains more than 70% even at 300 K, This results in a high characteristic temperature T-0.

引用

页码：409 / 411

页数：3

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