Prediction of plasma processes using neural network and genetic algorithm

被引:28
作者
Kim, B [1 ]
Bae, J [1 ]
机构
[1] Sejong Univ, Dept Elect Engn, Seoul 143747, South Korea
关键词
plasma etching; backpropagation neural network; genetic algorithm; statistical experimental design;
D O I
10.1016/j.sse.2005.08.003
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using genetic algorithm (GA) and backpropagation neural network (BPNN), computer models of plasma processes were constructed. The GA was applied to optimize five training factors simultaneously. The presented technique was evaluated with plasma etch data, characterized by a statistical experimental design. The etching was conducted in an inductively coupled plasma etch system. The etch outputs to model include aluminum (Al) etch rate, Al selectivity, silica profile angle, and DC bias. GA-BPNN models demonstrated improved predictions of more than 20% for all etch outputs but the DC bias. This indicates that a simultaneous optimization of training factors is more effective in improving the prediction performance of BPNN model than a sequential optimization of individual training factor. Compared to GA-BPNN models constructed in a previous training set, the presented models also yielded a much improved prediction of more than 35% for all etch outputs. The proven improvement indicates that the presented training set is more effective to improve GA-BPNN models. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1576 / 1580
页数:5
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