Electrical and optical characteristics of n-type-doped distributed Bragg mirrors on InP

被引：26

作者：

Dias, IFL ^{[1
]}

Nabet, B

Kohl, A

Benchimol, JL

Harmand, JC

机构：

[1] Univ Estadual Londrina, Dept Fis, BR-86051 Londrina, Parana, Brazil

[2] CNET, France Telecom, Lab Bagneux, F-92225 Bagneux, France

[3] Alcatel Alsthom Rech, Lab Marcoussis, F-91640 Marcoussis, France

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 06期

关键词：

Bragg mirrors; electrical conductance; long wavelength VCSEL's; reflectance; semiconductors on InP;

D O I：

10.1109/68.681476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of high reflectivity and low electrical resistivity Bragg mirrors is crucial for the emergence of 1.55-mu m vertical-cavity surface-emitting lasers (VCSEL's), Here, we report on three different n-type-doped semiconductor Bragg mirrors which are all lattice-matched to InP, The material systems are InGaAsP-InP, AlGaInAs-AlInAs, and AlGaAsSb-AlAsSb and the layers are designed for 1.55-mu m operation. The influence of the structural and intrinsic properties of the different heterostructures on the electrical resistivity and optical reflectivity is analyzed for the three samples.

引用

页码：763 / 765

页数：3

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