Vertical growth of carbon nanowalls using rf plasma-enhanced chemical vapor deposition

被引：102

作者：

Shiji, K

Hiramatsu, M

Enomoto, A

Nakamura, N

Amano, H

Hori, M

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Meijo Univ, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[3] Nagoya Univ, Dept Elect Engn & Comp Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

DIAMOND AND RELATED MATERIALS | 2005年 / 14卷 / 3-7期

关键词：

plasma CVD; nanostructures; graphite; morphology;

D O I：

10.1016/j.diamond.2004.10.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two-dimensional carbon nanostructures (carbon nanowalls) were fabricated by capacitively coupled, radio-frequency (rf) plasma-enhanced chemical vapor deposition (PECVD) employing fluorocarbon/hydrogen (H) mixtures. Correlation between carbon nanowall growth and fabrication conditions, such as the carbon source gases, was investigated. In addition, H atom density in the plasma was measured using vacuum ultraviolet absorption spectroscopy (VUVAS), in order to discuss the growth mechanism of carbon nanowalls. (c) 2004 Elsevier B.V. All rights reserved.

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收藏

页码：831 / 834

页数：4

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