Formation of aluminum oxynitride diffusion barriers for Ag metallization

被引：66

作者：

Wang, Y ^{[1
]}

Alford, TL ^{[1
]}

机构：

[1] Arizona State Univ, Dept Chem Bio & Mat Engn, NSF, Ctr Low Power Elect, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 01期

关键词：

D O I：

10.1063/1.123130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aluminum oxynitride (AlxOyNz) diffusion barriers have been formed in the temperature range of 400-725 degrees C by annealing Ag/Al bilayers on oxidized Si substrates in an ammonia (NH3) ambient. Rutherford backscattering spectrometry showed that the out-diffused Al reacted with ammonia and oxygen in the ambient and encapsulated the Ag films. The resulting Ag resistivity values are 1.75+/-0.35 mu Omega cm. Higher processing temperatures and thinner original Al layers showed to improve the resistivity of the encapsulated Ag layers. The thermal stability of these diffusion barriers was evaluated by depositing 50 nm of Cu films onto the encapsulated samples, and then annealing in either vacuum or flowing He-0.5% H-2. Results showed that these barriers sustained interdiffusion between Cu and Ag up to 620 degrees C at least for 30 min in either ambient. This temperature is a 200 degrees C improvement over previously reported values for the self-encapsulated Cu and Ag films. (C) 1999 American Institute of Physics. [S0003-6951(99)04801-9].

引用

页码：52 / 54

页数：3

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