Chemical vapor deposition of carbon on graphite by methane pyrolysis

被引:23
作者
Bammidipati, S
Stewart, GD
Elliott, JR
Gokoglu, SA
Purdy, MJ
机构
[1] UNIV AKRON,DEPT CHEM ENGN,AKRON,OH 44326
[2] NASA,LEWIS RES CTR,CLEVELAND,OH 44135
[3] BF GOODRICH CO,BRECKSVILLE,OH 44141
关键词
D O I
10.1002/aic.690421112
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
Chemical vapor deposition (CVD) of carbon by methane pyrolysis onto a nonporous graphite rod was studied experimentally in a hot-wall, laminar-flow reactor and theoretically by finite-element modeling. Reactor pressure ranged from 10 to 40 torr, control temperature from 1,000 to 1,100 degrees C, and methane was diluted with H-2, Ar, or N-2. The average residence time ranged from 1 to 50 s. A combination of experimental measurement and numerical modeling was used to accurately characterize fluid and thermal fields inside the reactor. Tractable numerical models were developed for the CVD of carbon with gas-phase chemical reaction mechanisms based on accepted kinetic expressions. Simpler mechanisms were reduced from ones based on a more extensive list of intermediate reactions by systematic comparison to experimental data. A simplified but rational model is recommended based on the best fit to experimental data at various flow rates and pressures. The study indicates that axial dispersion plays a significant role and the pressure fall-off effect for rate coefficients of unimolecular decomposition reactions must be taken into account.
引用
收藏
页码:3123 / 3132
页数:10
相关论文
共 25 条
[1]   A MODEL OF SILICON-CARBIDE CHEMICAL VAPOR-DEPOSITION [J].
ALLENDORF, MD ;
KEE, RJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (03) :841-852
[2]  
ASCHER U, 1981, ACM T MATH SOFTWARE, V7, P209, DOI 10.1145/355945.355950
[3]   EVALUATED KINETIC DATA FOR COMBUSTION MODELING [J].
BAULCH, DL ;
COBOS, CJ ;
COX, RA ;
ESSER, C ;
FRANK, P ;
JUST, T ;
KERR, JA ;
PILLING, MJ ;
TROE, J ;
WALKER, RW ;
WARNATZ, J .
JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA, 1992, 21 (03) :411-734
[4]   VAPOR-PHASE FABRICATION AND PROPERTIES OF CONTINUOUS-FILAMENT CERAMIC COMPOSITES [J].
BESMANN, TM ;
SHELDON, BW ;
LOWDEN, RA ;
STINTON, DP .
SCIENCE, 1991, 253 (5024) :1104-1109
[5]  
Bird R.B., 2006, TRANSPORT PHENOMENA, Vsecond, DOI 10.1002/aic.690070245
[6]   TRACTABLE CHEMICAL-MODELS FOR CVD OF SILICON AND CARBON [J].
BLANQUET, E ;
GOKOGLU, SA .
JOURNAL DE PHYSIQUE IV, 1993, 3 (C3) :43-49
[7]   THERMAL-DECOMPOSITION OF METHANE .1. KINETICS OF PRIMARY DECOMPOSITION TO C2H6 + H2 - RATE CONSTANT FOR HOMOGENEOUS UNIMOLECULAR DISSOCIATION OF METHANE AND ITS PRESSURE-DEPENDENCE [J].
CHEN, CJ ;
BACK, MH ;
BACK, RA .
CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1975, 53 (23) :3580-3590
[8]   MODELING OF CHEMICAL VAPOR INFILTRATION FOR CERAMIC COMPOSITES REINFORCED WITH LAYERED, WOVEN FABRICS [J].
CHUNG, GY ;
MCCOY, BJ .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1991, 74 (04) :746-751
[9]   CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON FROM SILANE AT LOW-TEMPERATURES .1. VERY LOW-PRESSURE DEPOSITION [J].
COMFORT, JH ;
REIF, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (08) :2386-2398
[10]   CONTINUOUS FLOW SYSTEMS - DISTRIBUTION OF RESIDENCE TIMES [J].
DANCKWERTS, PV .
CHEMICAL ENGINEERING SCIENCE, 1953, 2 (01) :1-13