A study of the influence of the Ga content on the long-term stability of Cu(In,Ga)Se2 thin film solar cells

被引：31

作者：

Malmström, J ^{[1
]}

Wennerberg, J ^{[1
]}

Stolt, L ^{[1
]}

机构：

[1] Uppsala Univ, Angstorm Solar Ctr, SE-75121 Uppsala, Sweden

来源：

THIN SOLID FILMS | 2003年 / 431卷

关键词：

Cu(In; Ga)Se-2; solar cells; stability; gallium;

D O I：

10.1016/S0040-6090(03)00185-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the long-term stability of a set of CuIn1-xGaxSe2 solar cells with different Ga-contents x = (0, 0.3, 0.4, 0.5, 0.6, 1) during 800 h of accelerated ageing in both dry and damp heat (DaH) conditions. Device performance has been monitored with quantum efficiency and current-voltage measurements at varying temperatures (J(V)(T)). All samples but that with x = 1 are stable in dry heat conditions. After 800 h of DaH exposure, the samples with Ga contents close to 0.4 show the smallest efficiency degradation of approximately 25% relative to their initial performance. The samples with x = 0 and x = 1 have degraded by approximately 90 and 65%, respectively. Analysis of the J(V)(T) measurements reveal a blocking behavior and enhancement of a second diode mechanism with high ideality factor, together explaining the loss in the solar cell parameters. We suggest that the second diode be assigned to tunneling-enhanced recombination at the CdS/CIGS interface. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：436 / 442

页数：7

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