Tunneling transport in polyoxometalate based composite materials

被引：44

作者：

Glezos, N ^{[1
]}

Argitis, P ^{[1
]}

Velessiotis, D ^{[1
]}

Diakoumakos, CD ^{[1
]}

机构：

[1] NCSR Demokritos, Inst Microelect, Aghia Paraskevi 15310, Greece

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 03期

关键词：

D O I：

10.1063/1.1594278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular materials containing tungsten polyoxometalates as the active elements embedded into polymer matrices are investigated as candidates for electronic device applications. The transport properties of these materials are investigated varying the interelectrode spacing and the polyoxometalate concentration. The I-V characteristics of planar devices reveal a conductivity peak at room temperature conditions for intermolecular distances less than 3 nm and electrode distances less than 100 nm. The transport characteristics are discussed in terms of tunneling mechanisms. (C) 2003 American Institute of Physics.

引用

页码：488 / 490

页数：3

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