Growth and characterization of a-axis textured ZnO thin films

被引：49

作者：

Nistor, LC

Ghica, C

Matei, D

Dinescu, G

Dinescu, M

Van Tendeloo, G

机构：

[1] Natl Inst Mat Phys, RO-77125 Magurele, Romania

[2] Natl Inst Laers Plasma & Radiat Phys, RO-77125 Magurele, Romania

[3] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 277卷 / 1-4期

关键词：

characterization; plasma assited laser deposition; ZnO; piezoelectric materials;

D O I：

10.1016/j.jcrysgro.2004.12.162

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Smooth a-axis oriented ZnO thin films are grown on (001) MgO substrates by pulsed laser deposition assisted by a very directional radio frequency oxygen plasma. The structure of the film is examined by X-ray diffraction, electron diffraction and high resolution electron microscopy. The film grows with vertical columns and is highly textured. Two preferential orientation relations between the ZnO film and the MgO substrate are observed: (10010)(ZnO) vertical bar vertical bar (002)(MgO); [0002](ZnO)vertical bar vertical bar[2 0 0](MgO) and (1010)(ZnO) vertical bar (002)(ZnO) vertical bar vertical bar [200](MgO) [1210](MgO). The film/substrate interface is flat and strained because of the rather large lattice mismatch between the (1010) plane of ZnO and the (002) plane of MgO. (c) 2005 Elsevier B.V. All rights reserved.

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页码：26 / 31

页数：6

相关论文

共 17 条

[1] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].

Chen, YF ;

Bagnall, DM ;

Koh, HJ ;

Park, KT ;

Hiraga, K ;

Zhu, ZQ ;

Yao, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918

[2] The investigation of preferred orientation growth of ZnO films on the PbTiO3-based ceramics and its application for SAW devices [J].

Chu, SY ;

Chen, TY ;

Water, W .

JOURNAL OF CRYSTAL GROWTH, 2003, 257 (3-4) :280-285

[3]

CRACIUN F, 2002, HDB THIN FILM MAT, V3, P231

[4] A double-chamber capacitively coupled RF discharge for plasma assisting deposition techniques [J].

Dinescu, G ;

Mitu, B ;

Aldea, E ;

Dinescu, M .

VACUUM, 2000, 56 (01) :83-86

[5] Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (01(1)over-bar2) sapphire by metalorganic chemical vapor deposition [J].

Gorla, CR ;

Emanetoglu, NW ;

Liang, S ;

Mayo, WE ;

Lu, Y ;

Wraback, M ;

Shen, H .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) :2595-2602

[6] HETEROEPITAXIAL GROWTH OF ZNO FILMS ON DIAMOND (111) PLANE BY MAGNETRON SPUTTERING [J].

HACHIGO, A ;

NAKAHATA, H ;

HIGAKI, K ;

FUJII, S ;

SHIKATA, S .

APPLIED PHYSICS LETTERS, 1994, 65 (20) :2556-2558

[7] Effect of oblique sputtering on microstructural modification of ZnO thin films [J].

Lee, YE ;

Kim, SG ;

Kim, YJ ;

Kim, HJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (03) :1194-1199

[8] Study of defects and interfaces in epitaxial ZnO films on (1 1 (2)over-bar 0) Al2O3 grown by electron cyclotron resonance-assisted molecular beam epitaxy [J].

Lim, SH ;

Shindo, D ;

Kang, HB ;

Nakamura, K .

JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) :202-207

[9] Epitaxial growth and properties of Ga-doped ZnO films grown by pulsed laser deposition [J].

Liu, ZF ;

Shan, FK ;

Li, YX ;

Shin, BC ;

Yu, YS .

JOURNAL OF CRYSTAL GROWTH, 2003, 259 (1-2) :130-136

[10] Control of morphology and orientation of ZnO thin films grown on SiO2/Si substrates [J].

Muthukumar, S ;

Gorla, CR ;

Emanetoglu, NW ;

Liang, S ;

Lu, Y .

JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) :197-201