Low temperature deposited L10 FePt-C (001) films with high coercivity and small grain size

被引：134

作者：

Chen, J. S.

Lim, B. C.

Hu, J. F.

Liu, B.

Chow, G. M.

Ju, G.

机构：

[1] Data Storage Inst, Singapore 117608, Singapore

[2] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore

[3] Seagate Technol, Pittsburgh, PA 15222 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 13期

关键词：

D O I：

10.1063/1.2789790

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

FePt-C films with high coercivity, (001) texture, and small grain size were deposited on MgO/CrRu/glass substrate by cosputtering FePt and carbon at 350 degrees C. The out-of-plane coercivity measured at room temperature increased from 9.6 to 15.1 kOe when C concentrations increased from 0% to 15%. Further increasing the C contents to 20% and 25% caused the decrease of coercivity to 13.6 and 11.8 kOe, respectively. With C doping, a two-layer structure of FePt-C films was formed and fcc-phase FePt particles were found. By optimizing the sputtering process, FePt-C (001) film with coercivity higher than 14.4 kOe and columnar FePt grains of 7.5 nm in diameter was obtained, which are suitable for ultrahigh density perpendicular recording.

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